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2N7002DW
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Continuous
Pulsed
V GSS
V GSS
±20
±40
V
V
Continuous Drain Current (Note 7) V GS = 5V
Steady
State
T A = +25 ° C
T A = +70 ° C
T A = +100 ° C
I D
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I S
I DM
0.53
0.8
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
T A = +25°C
Symbol
Value
0.31
Units
Total Power Dissipation (Note 6)
T A = +70°C
P D
0.2
W
T A = +100°C
0.12
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θ JA
410
°C/W
T A = +25°C
0.4
Total Power Dissipation (Note 7)
T A = +70°C
P D
0.25
W
T A = +100°C
0.15
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
Steady state
R θ JA
R θ JC
T J, T STG
318
135
-55 to +150
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
60
70
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
@ T C = +125°C
I DSS
I GSS
?
?
?
?
1.0
500
±10
μA
nA
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
1.0
?
2.0
V
V DS = V GS , I D = 250μA
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Diode Forward Voltage
@ T J = +25°C
@ T J = +125°C
R DS (ON)
I D(ON)
g FS
V SD
?
0.5
80
?
3.2
4.4
1.0
?
0.78
7.5
13.5
?
?
1.5
Ω
A
mS
V
V GS = 5.0V, I D = 0.05A
V GS = 10V, I D = 0.5A
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
22
11
2.0
50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
t D(on)
?
7.0
20
V DD = 30V, I D = 0.2A,
Turn-Off Delay Time
t D(off)
?
11.0
20
ns
R L = 150 Ω , V GEN = 10V,
R GEN = 25 Ω
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2N7002DW
Document number: DS30120 Rev. 16 - 2
2 of 5
www.diodes.com
November 2013
? Diodes Incorporated
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